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The PHI Quantes Equipped with Dual Scanning Monochromatic X-ray Source

2017.08.28 Update

The PHI Quantes Equipped with Dual Scanning Monochromatic X-ray Source

The PHI Quantes is equipped with a dual scanning X-ray source composed of a hard X-ray source (Cr Kα) and a conventional soft X-ray source (Al Kα), which have different energy values. This state-of-the-art XPS instrument has a capability to analyze the very small area where the user is interested in and a large area of the uniform sample surface.

What is Parallel Imaging MS/MS Option ?

2017.07.27

What is Parallel Imaging MS/MS Option ?

The parallel imaging MS/MS option available for TOF-SIMS achieves high-speed and high- sensitive tandem mass spectrometry of the outermost surface of a material, thereby enabling high-speed measurement of both MS1 and MS2 at the same time under static-SIMS conditions.

What is Hard X-ray Photoelectron Spectroscopy?

2015.09.02

What is Hard X-ray Photoelectron Spectroscopy?

The basic principle of hard x-ray photoelectron spectroscopy is similar to that of general XPS, which irradiates excitation light on the sample surface and measures the kinetic energy of the photoelectrons emitted. While the photon energy of the monochromatic AlKα x-ray source most commonly used in traditional XPS instruments is 1486.6 eV, the photon energy of the excitation source used in hard x-ray photoelectron spectroscopy is 5 to 8 keV, more than triple.

About TRIFT™ analyzers

2015.03.31

About TRIFT™ analyzers

The triple focusing electrostatic analyzer (TRIFT analyzer) simultaneously corrects the time-of-flight difference which occurs due to differences in initial energy and emission angle. Simultaneous correction of time-of-flight differences caused by energy and emission angle is the most distinctive feature of the TRIFT analyzer, which achieves high mass resolution and high detection sensitivity simultaneously, while also enabling imaging with fewer shadows.

About Gas Cluster Ion Beams

2014.08.15

About Gas Cluster Ion Beams

The Gas Cluster Ion Beam (GCIB) technology is an advanced technology from Japan, developed at Kyoto University. GCIB is an ion beam consisting of several thousand gas atoms (molecules) such as argon, which enables ion beam etching with extremely low energy per atom and surface flattening after etching, not possible with other ion beam technologies.

Other cluster ion beam applications