[Overview]
Focused ion beam (FIB) processing technology enables the preparation of cross-sections of various samples with extremely high precision. In particular, the use of bismuth ions makes it possible to obtain deep cross-sections in a shorter time compared to other ion species. By combining Bi-FIB with TOF-SIMS, imaging of the components constituting the sample from the processed cross-section becomes possible. This approach serves as a powerful tool for analyzing multilayer structures and thick samples (e.g., particles and batteries). In this seminar, we will explain the basic principles of Bi-FIB-TOF and introduce several related case studies.
Introduction of cross-section observation examples using Bi-FIB equipped on PHI nanoTOF 3+
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